How to distinguish transistor KT315 from KT361. BC847 analogue domestic - KT315 transistor Transistors KT315 and KT361 characteristics

One of the most famous transistors is KT315, an analogue of which did not soon appear in the open spaces Soviet Union, and which was the first mass-produced Soviet transistor. It is so universal that it continues to be used to this day (albeit quite limitedly and mostly by radio amateurs). The prerequisite for this was their versatility, long service life and extensive experience in creating something with their help (which can be found in special sources).

Development

Soviet engineers came up with the idea of ​​mass production back in 1966. The transistor was developed in 1967 by the Fryazino Semiconductor Plant in its research and design bureau. And in 1968, the first units came off.

How does it stand out among other transistors?

First of all, attention was paid to his appearance and characteristics. The frequency bar was 250 MHz, which as of 1967 was very, very high. Also, the ease of production led to the production of a huge number of transistors. There was also something unique (at that time) in the issues of grounding the negative pole of the power supply.

The technology behind the transistor

For production, planar technology was used (it was envisaged that all structures were created on one side, the conductivity of the material was the same as in collectors, so first, when used, the base region is formed, and then the emitter region is formed in it). The parameters that he obtained made him the best in the world (at the time of creation). It made it possible to replace many other parts in electronics, while being cheap. It got to the point that in the Soviet Union, stores for radio amateurs sold it by weight.

KT315 - domestic and foreign analogues

But since main theme article is not KT315 - analogues for this transistor, then you should already pay attention to the main topic. So, here is a list of analogues:

1. Bipolar transistor BC847B. A relatively expensive (3 rubles per 1 piece) low-power transistor with a significant gain. Compared to KT315, the foreign analogue is quite expensive. But it has the advantage that when soldering and re-soldering it does not fail so quickly (which is not least due to its enlarged and reinforced design). Maximum power dissipation - 0.25. Up to 50 Volts can be supplied to the collector-base direction. To the collector-emitter - up to 45 Volts. The maximum voltage for the emitter-base direction is 6 Volts. The collector junction has a capacity of 8. The maximum junction temperature is 150 degrees. Statistical current transfer coefficient - 200.
2. Bipolar transistor 2SC634. This imported analogue of KT315 is quite balanced in terms of characteristics and price. The maximum power dissipation value is 0.18. The maximum permissible voltage on the collector-base and collector-emitter is 40 Volts. Emitter-base - only 6 Volts. The collector junction capacity is 8. The maximum junction temperature is 125 degrees. Static current transfer coefficient is 90.
3. Bipolar transistor KT3102. To say that for KT315 it is a domestic analogue would be incorrect, because historically it so happened that such parts were manufactured of one type, which meets all the necessary requests and can perform the functions assigned to it. The fact is that simply KT3102 does not exist; another letter must follow. To avoid conflicts, values ​​will be specified for the entire group. You can get more detailed information by looking at each transistor. The domestic development is an improved KT315. Analog in this case is not an entirely appropriate word, but rather an improved mechanism. The maximum power dissipation of KT3102 is 0.25. A maximum voltage of 20-50 Volts can be supplied to the base collector. The maximum voltage that can be supplied to the collector-emitter is also 20-50 Volts. The maximum voltage to the emitter-base is 5 Volts. The capacitance of the collector junction is 6. The maximum junction temperature is 150 degrees. The static current transfer coefficient is 100.
4. Bipolar transistor 2SC641. Maximum power dissipation - 0.1. The voltage in the collector-base direction should not exceed 40 Volts. The maximum voltage in the collector-emitter direction should not be more than 15 Volts. For the emitter-base direction, this value should not exceed 5 Volts. The collector junction capacity is 6 units. The maximum transition temperature is 125 degrees. The static current transfer coefficient is 35.

Where are they used?

KT315, analogues (foreign and domestic) were and are now used by radio amateurs when creating amplifiers for high, medium and low frequencies. They can also be used in generators, signal converters and logic circuits. If you use your brain, you can find other uses, but this is the main purpose for the KT315. The parameters of the analog (any) are slightly different. But the main thing is that these are bipolar transistors, and their power is important solely for the power of the circuits that will be assembled.

Conclusion

The article examined the prototype (KT315) and its analogs with a description of the possibilities of their use. We hope that the information provided here will be useful to you. It is also necessary to recall that transistors are rather fragile elements, which also often burn out. Therefore, when working with them, and with other electrical parts, follow safety precautions.

Silicon epitaxial-planar n-p-n transistors type KT315 and KT315-1 (complementary pair). Designed for use in amplifiers of high, intermediate and low frequencies, directly used in radio-electronic equipment manufactured for civilian equipment and for export. Transistors KT315 and KT315-1 are produced in a plastic case with flexible leads. The KT315 transistor is manufactured in the KT-13 package. Subsequently, KT315 began to be produced in the KT-26 package (a foreign analogue of TO92), transistors in this package received an additional “1” in the designation, for example KT315G1. The housing reliably protects the transistor crystal from mechanical and chemical damage. Transistors KT315H and KT315N1 are intended for use in color television. Transistors KT315P and KT315R1 are intended for use in the “Electronics - VM” video recorder. Transistors are manufactured in the UHL climatic design and in a single design, suitable for both manual and automated assembly of equipment.

KT315 was produced by the following enterprises: "Electropribor" in Fryazino, "Kvazar" in Kiev, "Continent" in Zelenodolsk, "Kvartsit" in Ordzhonikidze, PA "Elkor" Republic of Kabardino-Balkaria, Nalchik, NIIPP Tomsk, PA "Electronics" Voronezh, in 1970 their production was also transferred to Poland to the Unitra CEMI enterprise.

As a result of negotiations in 1970, the Voronezh Association "Electronics" in terms of cooperation transferred the production of KT315 transistors to Poland. To do this, the workshop in Voronezh was completely dismantled, and in the shortest possible time, together with a supply of materials and components, it was transported, installed and launched in Warsaw. This electronics research and production center, established in 1970, was a semiconductor manufacturer in Poland. Unitra CEMI eventually went bankrupt in 1990, leaving the Polish microelectronics market open to foreign companies. Website of the Unitra CEMI enterprise museum: http://cemi.cba.pl/. By the end of the USSR, the total number of KT315 transistors produced exceeded 7 billion.

The KT315 transistor is produced to this day by a number of enterprises: CJSC Kremniy, Bryansk, SKB Elkor, Republic of Kabardino-Balkaria, Nalchik, NIIPP plant, Tomsk. The KT315-1 transistor is produced by: Kremniy JSC, Bryansk, Transistor plant, Republic of Belarus, Minsk, Eleks JSC, Aleksandrov, Vladimir region.

An example of the designation of KT315 transistors when ordering and in the design documentation of other products: “Transistor KT315A ZhK.365.200 TU/05”, for transistors KT315-1: “Transistor KT315A1 ZhK.365.200 TU/02”.

Brief specifications transistors KT315 and KT315-1 are presented in Table 1.

Table 1 - Brief technical characteristics of transistors KT315 and KT315-1

Type	Structure	P K max, P K* t. max, mW	f gr, MHz	U KBO max, U KER*max , IN	U EBO max, IN	I K max, mA	I KBO, µA	h 21e, h 21E*	C K, pF	r CE us, Ohm	r b, Ohm	τ to, ps
KT315A1	n-p-n	150	≥250	25	6	100	≤0,5	20...90 (10 V; 1 mA)	≤7	≤20	≤40	≤300
KT315B1	n-p-n	150	≥250	20	6	100	≤0,5	50...350 (10 V; 1 mA)	≤7	≤20	≤40	≤300
KT315B1	n-p-n	150	≥250	40	6	100	≤0,5	20...90 (10 V; 1 mA)	≤7	≤20	≤40	≤300
KT315G1	n-p-n	150	≥250	35	6	100	≤0,5	50...350 (10 V; 1 mA)	≤7	≤20	≤40	≤300
KT315D1	n-p-n	150	≥250	40	6	100	≤0,5	20...90 (10 V; 1 mA)	≤7	≤20	≤40	≤300
KT315E1	n-p-n	150	≥250	35	6	100	≤0,5	20...90 (10 V; 1 mA)	≤7	≤20	≤40	≤300
KT315Zh1	n-p-n	100	≥250	15	6	100	≤0,5	30...250 (10 V; 1 mA)	≤7	≤20	≤40	≤300
KT315I1	n-p-n	100	≥250	60	6	100	≤0,5	30 (10 V; 1 mA)	≤7	≤20	≤40	≤300
KT315N1	n-p-n	150	≥250	20	6	100	≤0,5	50...350 (10 V; 1 mA)	≤7	–	–	–
KT315Р1	n-p-n	150	≥250	35	6	100	≤0,5	150...350 (10 V; 1 mA)	≤7	–	–	–
KT315A	n-p-n	150 (250*)	≥250	25	6	100	≤0,5	30...120* (10 V; 1 mA)	≤7	≤20	≤40	≤300
KT315B	n-p-n	150 (250*)	≥250	20	6	100	≤0,5	50...350* (10 V; 1 mA)	≤7	≤20	≤40	≤500
KT315V	n-p-n	150 (250*)	≥250	40	6	100	≤0,5	30...120* (10 V; 1 mA)	≤7	≤20	≤40	≤500
KT315G	n-p-n	150 (250*)	≥250	35	6	100	≤0,5	50...350* (10 V; 1 mA)	≤7	≤20	≤40	≤500
KT315D	n-p-n	150 (250*)	≥250	40* (10k)	6	100	≤0,6	20...90 (10 V; 1 mA)	≤7	≤30	≤40	≤1000
KT315E	n-p-n	150 (250*)	≥250	35* (10k)	6	100	≤0,6	50...350* (10 V; 1 mA)	≤7	≤30	≤40	≤1000
KT315ZH	n-p-n	100	≥250	20* (10k)	6	50	≤0,6	30...250* (10 V; 1 mA)	≤7	≤25	–	≤800
KT315I	n-p-n	100	≥250	60* (10k)	6	50	≤0,6	≥30* (10 V; 1 mA)	≤7	≤45	–	≤950
KT315N	n-p-n	150	≥250	35* (10k)	6	100	≤0,6	50...350* (10 V; 1 mA)	≤7	≤5,5	–	≤1000
KT315R	n-p-n	150	≥250	35* (10k)	6	100	≤0,5	150...350* (10 V; 1 mA)	≤7	≤20	–	≤500

Note:
1. I KBO – reverse collector current – ​​current through the collector junction at a given reverse collector-base voltage and open emitter terminal, measured at U KB = 10 V;
2. I K max – maximum permissible D.C. collector;
3. U KBO max – collector-base breakdown voltage at a given reverse collector current and an open emitter circuit;
4. U EBO max – emitter-base breakdown voltage at a given emitter reverse current and open collector circuit;
5. U KER max – collector-emitter breakdown voltage at a given collector current and a given (final) resistance in the base-emitter circuit;
6. R K.t max – constant dissipated power of the collector with a heat sink;
7. P K max – maximum permissible constant power dissipation of the collector;
8. r b – base resistance;
9. r KE us – saturation resistance between collector and emitter;
10. C K – collector junction capacitance, measured at U K = 10 V;
11. f gp – cutoff frequency of the transistor current transfer coefficient for a common emitter circuit;
12. h 2lе – transistor voltage feedback coefficient in low-signal mode for circuits with a common emitter and a common base, respectively;
13. h 2lЭ – for a circuit with a common emitter in large signal mode;
14. τ к – time constant of the feedback circuit at high frequency.

Dimensions of transistor KT315

Transistor housing type KT-13. The mass of one transistor is no more than 0.2 g. The tensile force is 5 N (0.5 kgf). The minimum distance between the lead bend and the housing is 1 mm (indicated as L1 in the figure). Soldering temperature (235 ± 5) °C, distance from the body to the soldering point 1 mm, soldering duration (2 ± 0.5) s. Transistors must withstand the heat generated at the soldering temperature (260 ± 5) °C for 4 seconds. The leads must remain solderable for 12 months from the date of manufacture, subject to the soldering modes and rules specified in the “Operating Instructions” section. Transistors are resistant to alcohol-gasoline mixture (1:1). KT315 transistors are fireproof. The overall dimensions of the KT315 transistor are shown in Figure 1.

Figure 1 – Marking, pinout and overall dimensions of the KT315 transistor

Dimensions of transistor KT315-1

Transistor housing type KT-26. The weight of one transistor is no more than 0.3 g. The minimum distance of the lead bend from the body is 2 mm (indicated as L1 in the figure). Soldering temperature (235 ± 5) °C, distance from the body to the soldering point is at least 2 mm, soldering duration (2 ± 0.5) s. KT315-1 transistors are fireproof. The overall dimensions of the KT315-1 transistor are shown in Figure 2.

Figure 2 – Marking, pinout and overall dimensions of the KT315-1 transistor

Transistor pinout

If you place the KT315 transistor with the markings facing away from you (as shown in Figure 1) with the terminals down, then the left terminal is the base, the central one is the collector, and the right one is the emitter.

If you place the KT315-1 transistor on the contrary with the markings facing you (as shown in Figure 2) with the terminals also down, then the left terminal is the emitter, the central one is the collector, and the right one is the base.

Transistor markings

Transistor KT315. The type of transistor is indicated on the label, and the group is also indicated on the body of the device in the form of a letter. The case indicates the full name of the transistor or just a letter, which is shifted to the left edge of the case. The plant's trademark may not be indicated. The date of issue is indicated in a digital or coded designation (only the year of issue can be indicated). The dot in the transistor marking indicates its application - as part of color television. Old (manufactured before 1971) KT315 transistors were marked with a letter in the middle of the case. At the same time, the first issues were marked with only one capital letter, and around 1971 they switched to the usual two-line letter. An example of the marking of the KT315 transistor is shown in Figure 1. It should also be noted that the KT315 transistor was the first mass-produced transistor with code marking in a miniature plastic package KT-13. The vast majority of transistors are KT315 and KT361 (the characteristics are the same as those of KT315, and conductivity pnp) was released in yellow or red-orange colors; transistors in pink, green and black colors are much less common. In the marking of transistors intended for sale, in addition to the letter indicating the group, trademark The factory and date of manufacture also included the retail price, for example “ts20k”, which meant the price was 20 kopecks.

Transistor KT315-1. The type of transistor is also indicated on the label, and the full name of the transistor is indicated on the case, and transistors can also be marked with a code sign. An example of the marking of the KT315-1 transistor is shown in Figure 2. The marking of the transistor with a code sign is given in Table 2.

Table 2 - Marking of the KT315-1 transistor with a code sign

Transistor type	Marking mark on the cut side surface of the body	Marking mark at the end of the body
KT315A1	Green triangle	Red dot
KT315B1	Green triangle	Yellow dot
KT315B1	Green triangle	Green dot
KT315G1	Green triangle	Blue dot
KT315D1	Green triangle	Blue dot
KT315E1	Green triangle	White dot
KT315Zh1	Green triangle	Two red dots
KT315I1	Green triangle	Two yellow dots
KT315N1	Green triangle	Two green dots
KT315Р1	Green triangle	Two blue dots

Instructions for the use and operation of transistors

The main purpose of transistors is to work in amplifier stages and other circuits of electronic equipment. It is allowed to use transistors manufactured in normal climatic conditions in equipment intended for use in all climatic conditions, when covering transistors directly in the equipment with varnishes (in 3 - 4 layers) of type UR-231 according to TU 6-21-14 or EP-730 according to GOST 20824, followed by drying. The permissible value of the static potential is 500 V. The minimum permissible distance from the case to the place of tinning and soldering (along the lead length) is 1 mm for the KT315 transistor and 2 mm for the KT315-1 transistor. The number of permissible re-solderings of terminals during installation (assembly) operations is one.

External influencing factors

Mechanical impacts according to group 2, table 1 in GOST 11630, including:
– sinusoidal vibration;
– frequency range 1-2000 Hz;
– acceleration amplitude 100 m/s 2 (10g);
– linear acceleration 1000 m/s 2 (100g).

Climatic influences - according to GOST 11630, including: increased operating temperature of the environment 100 ° C; reduced operating temperature of the environment minus 60 °C; change in ambient temperature from minus 60 to 100 °C. For KT315-1 transistors, the temperature of the environment changes from minus 45 to 100 °C

Transistor reliability

The failure rate of transistors during operating time is more than 3×10 -7 1/h. Transistor operating time tn = 50,000 hours. 98% shelf life of transistors is 12 years. The packaging must protect transistors from static electricity charges.

Foreign analogues of the KT315 transistor

Foreign analogues of the KT315 transistor are shown in Table 3. Technical information (datasheet) for foreign analogues of the KT315 transistor can also be downloaded in the table below. The prices below correspond to the status as of 08.2018.

Table 3 - Foreign analogues of the KT315 transistor

Domestic transistor	Foreign analogue	Opportunity buy	Company manufacturer	A country manufacturer
KT315A		No	Unitra CEMI	Poland
KT315B		No	Unitra CEMI	Poland
KT315V		No	Unitra CEMI	Poland
KT315G		No	Unitra CEMI	Poland
KT315D		There is	Hitachi	Japan
KT315E		there is ~ 4$	Central Semiconductor	USA
KT315ZH		available ~ 9$	Sprague electric corp.	USA
		There is	ITT Intermetall GmbH	Germany
KT315I		available ~ 16$	New Jersey Semiconductor	USA
		There is	Sony	Japan
KT315N		there is ~1$	Sony	Japan
KT315R		No	Unitra CEMI	Poland

The foreign prototype of the KT315-1 transistor is the transistors 2SC544, 2SC545, 2SC546, manufactured by Sanyo Electric, produced in Japan. Transistors 2SC545, 2SC546 can also be purchased, the estimated price is about $6.

Main technical characteristics

The main electrical parameters of KT315 transistors upon acceptance and delivery are shown in Table 4. The maximum permissible operating modes of the transistor are given in Table 5. The current-voltage characteristics of KT315 transistors are shown in Figures 3 - 8. The dependences of the electrical parameters of KT315 transistors on the modes and conditions of their operation are presented in Figures 9 – 19.

Table 4 – Electrical parameters of KT315 transistors upon acceptance and delivery

Parameter name (measurement mode) units	Literal designation	Norm parameter		Temperature, °C
		no less	no more
Boundary voltage (IC =10 mA), V KT315A, KT315B, KT315ZH, KT315N KT315V, KT315D, KT315I KT315G, KT315E, KT315R	U (CEO)	15 30 25	–	25
(IC =20 mA, I B =2 mA), V KT315A, KT315B, KT315V, KT315G, KT315R KT315D, KT315E KT315ZH KT315I	U CEsat	–	0,4 0,6 0,5 0,9
Collector-emitter saturation voltage (IC =70 mA, I B =3.5 mA), V KT315N	U CEsat	–	0,4
Base-emitter saturation voltage (IC =20 mA, I B =2 mA), V KT315A, KT315B, KT315V, KT315G, KT315N, KTZ I5P KT315D, KT315E KT315ZH KT315I	UBEsat	–	1,0 1,1 0,9 1,35
KT315A, KT315B, KT315V, KT315G, KT315N, KT315R KT315D, KT315E, KT315ZH, KG315I	I CBO	–	0,5 0,6	25, -60
Reverse collector current (U CB =10 V), µA KT3I5A KT315B, KT315V, KT315G, KT315N, KT315R KT315D, KT315E	I CBO	–	10 15	100
Reverse emitter current (U EB =5 V) µA KT315A – KG315E, KT315ZH, XT315N KT315I KT315R	I EBO	–	30 50 3	25
, (R BE =10 kOhm U CE =25 V), mA, KT3I5A (R BE =10 kOhm U CE =20 V), mA, KT315B, KT315N (R BE =10 kOhm U CE =40 V), mA KT315V (R BE =10 kOhm U CE =35 V), mA, KT315G (R BE =10 kOhm U CE =40 V), mA, KT315D (R BE =10 kOhm U CE =35 V), mA, KT315E	I CER	–	0,6 0,6 0,6 0,6 1,0 1,0 0,005
Reverse current collector-emitter (R BE =10 kOhm U CE =35 V), mA, KT315R	I CER	–	0,01	100
Reverse current collector-emitter (U CE =20 V), mA, KT315Zh (U CE =60 V), mA, KT315I	I CES	–	0,01 0,1	25, -60
Reverse current collector-emitter (U CE =20 V), mA, KT3I5Zh (U CE =60 V), mA, KT3I5I	I CES	–	0,1 0,2	100
Static current transfer coefficient (U CB = 10 V, I E = 1 mA) KT315A, KT3I5B KT315D KT315ZH KT315I KT315R	h 21E	30 50 20 30 30 150	120 350 90 250 – 350	25
Static current transfer coefficient (U CB = 10 V, I E = 1 mA) KT315A, KT3I5B KTZ15B, KT315G, KT315E, KT315N KT315D KT315ZH KT315I KT315R	h 21E	30 50 20 30 30 150	250 700 250 400 – 700	100
Static current transfer coefficient (U CB = 10 V, I E = 1 mA) KT315A, KT3I5B KTZ15B, KT315G, KT315E, KT315N KT315D KT315ZH KT315I KT315R	h 21E	5 15 5 5 5 70	120 350 90 250 – 350	-60
Current transfer coefficient module at high frequency (U CB = 10 V, I E = 5 mA, f = 100 MHz)	|h 21E |	2,5	–	25
Collector junction capacitance (UCB = 10 V, f = 10 MHz), pF	C C	–	7	25

Table 5 – Maximum permissible operating modes of the KT315 transistor

Parameter, unit	Designation	Parameter norm
		KG315A	KG315B	KG315V	KG315G	KTZ15D	KG315E	KG315ZH	KG315I	KT315N	KT315R
Max. acceptable constant pressure collector-emitter, (R BE = 10 kOhm), V 1)	U CERmax	25	20	40	35	40	35	–	–	20	35
Max. permissible constant collector-emitter voltage during a short circuit in the emitter-base circuit, V 1)	U CES max	–	–	–	–	–	–	20	60	–	–
Max. permissible DC collector-base voltage, V 1)	U CB max	25	20	40	35	40	35	–	–	20	35
Max. permissible constant emitter-base voltage, V 1)	U EB max	6	6	6	6	6	6	6	6	6	6
Max. permissible direct collector current, mA 1)	I C max	100	100	100	100	100	100	100	100	100	100
Max. permissible constant dissipated power of the collector, mW 2)	P C max	200	200	200	200	200	200	200	200	200	200
Max. permissible transition temperature, ⁰С	t j max	125	125	125	125	125	125	125	125	125	125

Note:
1. For the entire operating temperature range.
2. At t atv from minus 60 to 25 °C. When the temperature rises above 25 °C, P C max is calculated by the formula:

where R t hjα is the total thermal resistance of the junction-environment, equal to 0.5 °C/mW.

Figure 3 – Typical input characteristics of transistors KT315A – KT315I, KT315N, KT315R
Figure 4 – Typical input characteristics of transistors KT315A – KT315I, KT315N, KT315R
at U CE = 0, t atv = (25±10) °С Figure 5 – Typical output characteristics of transistors of types KT315A, KT315V, KT315D, KT315I
at t atb = (25±10) °C Figure 6 – Typical output characteristics of transistors of types KT315B, KT315G, KT315E, KT315N
at t atb = (25±10) °C Figure 7 – Typical output characteristics
transistor KT315Zh at t atv = (25±10) °C Figure 8 – Typical output characteristics
transistor KT315R at t atv = (25±10) °C Figure 9 – Dependence of collector-emitter saturation voltage on direct collector current for transistors of type KT315A - KT315I, KT315N, KT315R at I C / I B = 10,
t atb = (25±10) °С Figure 10 – Dependence of base-emitter saturation voltage on direct collector current for transistors of type KT315A – KT315I, KT315N, KT315R at I C /I B = 10, t atv = (25±10) °C Figure 11 – Dependence of the static current transfer coefficient on the emitter direct current for transistors KT315A, KT315V, KT315D, KT315I at U CB = 10,
t atb = (25±10) °С Figure 12 – Dependence of the static current transfer coefficient on the emitter direct current for transistors KT315B, KT315G, KT315E, KT315N at U CB = 10,
t atb = (25±10) °С Figure 13 – Dependence of the static current transfer coefficient on the emitter direct current for the KT315Zh transistor at U CB = 10, t atv = (25±10) °C Figure 14 – Dependence of the static current transfer coefficient on the emitter direct current for the KT315R transistor at U CB = 10, t atv = (25±10) °C Figure 15 – Dependence of the modulus of the current transfer coefficient at high frequency on the direct current of the emitter at U CB = 10, f = 100 MHz, t atv = (25±10) °C Figure 16 – Dependence of the time constant of the feedback circuit at high frequency on the collector-base voltage at I E = 5 mA, t atv = (25 ± 10) ° C for KT315A Figure 17 – Dependence of the time constant of the feedback circuit at high frequency on the collector-base voltage at I E = 5 mA, t atv = (25±10) °C for KT315E, KT315V, KT315G, KT315N, KT315R Figure 18 – Dependence of the time constant of the feedback circuit at high frequency on the emitter current at U CB = 10 V, f = 5 MHz, t atv = (25±10) °C for
KT315A

Even though I’m late for Radio Day, I’ll still write about KT315. This transistor has been seen and soldered by many, but today we will see how the KT315 produced in different years differs, what its design is, and we will compare its design with modern foreign analogues.

About production

KT315 is the first transistor produced according to the latest fashion of the late 60s - it is a planar epitaxial transistor, i.e. the collector, emitter and base are manufactured sequentially on one silicon wafer: a silicon wafer is taken, doped to type n (this will be the collector), then doped to a certain depth to type p (this will be the base), and then doped again to a smaller depth on top depth of type n (this will be the emitter). Next, the plate needs to be cut into pieces and packaged in a plastic case.

This manufacturing process was much cheaper than alloy technology, and made it possible to obtain previously unimaginable transistor parameters (in particular, operating frequency 250-300 MHz).

The next novelty, which led to cheaper production, was mounting the crystal not in a metal case, but on a metal strip with leads: a crystal, on the lower side of which the collector was soldered to the central terminal, and the base and emitter were connected with a welded wire. Then all this was filled with plastic, the excess parts of the tape were cut off - and the KT315 was obtained the way we are used to seeing it.

Explanations for the figure on the right: a - scribing and dividing the plate into crystals with ready-made structures; b - soldering of crystals to the tape; c - connection of the output; g - cutting the tape; d - sealing; e - removal from the mold; g - cutting the tape and separating diodes/transistors; 1 - tape; 2 - crystal; 3 - crystal output

Serial production began in 1967-1968, for mere mortals the price at first was 4 rubles per transistor. But already in the mid-70s it dropped to 15-20 kopecks, which made it a truly affordable transistor. With an engineer's salary of 120 rubles, it was possible to buy 600 transistors per month. By the way, now for an engineer’s conditional salary of 45 thousand rubles you can buy 121,000 BC856B transistors, so the engineer’s transistor standard of living has increased 201 times

It is noteworthy that the first devices assembled on the KT315 were transistor (microcircuits were just gaining momentum) “calculators” Elektronika DD and Elektronika 68.

This is the collection I found:

Those without a manufacturer's sign are KT361, pnp option. The rest, with the logo - KT315 (even if the “letter is in the center”). It is noteworthy that in times of a planned economy, fixed prices, and a formal absence of speculation, the price was sometimes written directly on transistors.

What's inside?

The oldest transistor I found is KT315A, released in March 1978.
We see that the crystal is not broken off from the plate perfectly; there is a lot of unused space around the transistor.

Here the crystal itself is a collector, in the center, if I’m not mistaken, there are circles of the base, and around it there is a wider “belt” of the emitter. The base seems to dive under the emitter and comes out on the back side of the ring.

Here you can immediately see that the space is spent much more economically, the crystal is cut almost perfectly, small non-critical photolithography defects are noticeable, apparently contact photolithography is still used here. However, for transistors this is quite enough.

Comparison

If we compare it in scale with the modern NXP BC847B transistor, we can see that the size was reduced by another factor of 2 due to “squaring”, but the transistor itself did not fundamentally change - the same collector at the “bottom” of the crystal, and the emitter and base leads welded with wire.

It is noteworthy that the width/height of the BC847 crystal is almost equal to the thickness of the wafer; it is practically a silicon cube, not a wafer. It is difficult to reduce the area further, at least without further thinning the plate (thinning of the plate - spelled correctly).

Future

Is KT315 dead? Definitely not. Until now, for example, it is in the price lists of Integral at 248 Belarusian rubles (~1 Russian ruble), i.e. probably still in production. Of course, with development automatic installation printed circuit boards, he had to give way to SMD options, for example KT3129 and KT3130 and many others, including foreign analogues BC846-BC848, BC856-BC858.

Designation of the KT315B transistor on the diagrams

On circuit diagrams The transistor is designated both by a letter code and by a conventional graphic code. The alphabetic code consists of the Latin letters VT and a number (ordinal number on the diagram). Conditional graphic designation The KT315B transistor is usually placed in a circle, symbolizing its body. A short dash with a line from the middle symbolizes the base, two inclined lines drawn to its edges at an angle of 60° symbolize the emitter and collector. The emitter has an arrow pointing away from the base.

Characteristics of the KT315B transistor

• Structure n-p-n
• Maximum permissible (pulse) collector-base voltage 20 V
• Maximum permissible (pulse) collector-emitter voltage 20 V
• Maximum permissible constant (pulse) collector current 100 mA
• Maximum permissible continuous power dissipation of the collector without heat sink (with heat sink) 0.15 W
• Static current transfer coefficient of a bipolar transistor in a common emitter circuit 50-350
• Reverse collector current
• Cutoff frequency of current transfer coefficient in a circuit with a common emitter =>250 MHz

Analogs of transistor KT315B

Transistors of the KT315 and KT 361 series
The series of these silicon transistors has been very popular from the last century to the present day. Among other things, they have a very convenient case and surface-mount pins. These transistors have become very friendly with microcontrollers and are often used as buffer stages between microcontrollers and peripherals. The availability and price of this series please any radio amateur; you can buy them in buckets at once. The functions in the radio circuits of these transistors are very diverse. The high cut-off frequency makes it possible to make generators on them up to the VHF range. They also perform well in low-power audio amplifiers. The color of the transistor housing can be yellow, green, red, I haven’t come across any others.
Now a little more about the cases: How to distinguish KT315 from KT361? As you can see, only the last letter of the series is marked on the case. There are several methods: The first thing you need to remember is that the base of this series is on the right, and the emitter is on the left. Transistor KT315B If you look at the transistor logo and its legs are pointing down. The simplest thing here is to insert the transistor into a multimeter where there is a transistor test. 315 series is an n-p-n crystal, 361 p-n-p series crystal.
The second option is to measure the conductivity of the junctions with a multimeter (base-emitter, base-collector). KT315 will ring transitions with a plus on the base, KT361 with a minus on the base.
Well, lastly, this is how I distinguish them: Everything is very simple: KT315 has the logo letter on the left, and KT361 has it in the middle. Okay, let's go over electrical parameters data of domestic electronics products. Power - 150 mW Cutoff frequency - 100 MHz Collector current - 100 mA Gain - 20 - 250 (depending on the letter and the variation of parameters during manufacturing) In reality, transistors from the same batch with the “E” logo showed a gain spread from 57 to 186 for KT361 and 106 - 208 for KT 315. Collector-emitter voltage - 25V (a,b), 35V (c,d,e,f), 60V (g,i). It is not difficult to check the transistors for serviceability. Using the same multimeter in “continuity” mode, we check the resistance between the emitter and collector. There should be a break in both directions. Then we call the transitions from base to emitter and from base to collector. With a working transistor, both junctions (taking into account their polarity) should show approximately the same values ​​of about 500-600 Ohms.

Information about analogues of the bipolar high-frequency npn transistor BC847C.

This page contains information about analogues of the bipolar high-frequency npn transistor BC847C.

Before replacing the transistor with a similar one, !MANDATORY! compare the parameters of the original transistor and the analogue offered on the page. Make the decision to replace after comparing the characteristics, taking into account the specific application scheme and operating mode of the device.

You can try replacing the BC847C transistor
transistor 2N2222;
transistor BC547C;
transistor
transistor FMMTA06;
transistor

Collective mind.

Added by users:

recording date: 2016-05-31 01:30:30

Add an analogue of the BC847C transistor.

You Do you know an analogue or complementary pair? transistor BC847C?

KT315: analogues in the world

Add. Fields marked with an asterisk are required.

Contents of the transistor reference book

Parameters of n-channel field-effect transistors.
Parameters of p-channel field effect transistors.
Add a description of the field effect transistor.

Parameters of bipolar low-frequency npn transistors.
Parameters of bipolar low-frequency pnp transistors.
Parameters of bipolar high-frequency npn transistors.
Parameters of bipolar high-frequency pnp transistors.
Parameters of bipolar ultrahigh frequency npn transistors.
Parameters of bipolar ultrahigh frequency pnp transistors.
Add a description of the bipolar transistor.

Parameters of insulated gate bipolar transistors (IGBT).
Add a description of the insulated gate bipolar transistor.

Search for a transistor by marking.
Search for a bipolar transistor using basic parameters.
Search for a field effect transistor using basic parameters.
Search for IGBTs using basic parameters.

Standard sizes of transistor housings.
Electronic components stores.

It is hoped that the transistor reference book will be useful to experienced and novice radio amateurs, designers and students. To all those who in one way or another face the need to learn more about the parameters of transistors. More detailed information You can read about all the features of this online directory on the “About the site” page.
If you notice an error, please write a letter.
Thank you for your patience and cooperation.

Transistors KT817A, KT817B, KT817V, KT817G.

Transistors KT817, - silicon, universal, powerful low-frequency structures - n-p-n.
Designed for use in low frequency amplifiers, converters and pulse circuits.
The case is plastic, with flexible leads.
Weight - about 0.7 g. Alphanumeric markings on the side surface of the case, can be of two types.

Coded four-digit marking on one line and non-coded marking on two. The first character in the coded marking KT817 is the number 7, the second character is a letter indicating the class. The next two characters indicate the month and year of issue. In non-coded markings, the month and year are indicated in the top line. The figure below shows the pinout and markings of KT817.

The most important parameters.

Current transfer coefficient for transistors KT817A, KT817B, KT817V - 20 .
For transistor KT817G - 15 .

Current transfer coefficient cut-off frequency — 3 MHz.

Maximum collector-emitter voltage. For transistor KT817A - 25 V.
For transistors KT817B - 45 V.
For transistor KT817V - 60 V.
For transistor KT817G - 80 V.

Maximum collector current. — 3 A. Collector power dissipation— 1 W, without heat sink, 25 W - with heat sink.

Base-emitter saturation voltage 1,5 V.

Collector-emitter saturation voltage with a collector current of 3A and a base current of 0.3A - no more 0,6 V.

Reverse collector current for KT817A transistors at collector-base voltage 25 c, transistors KT817B at collector-base voltage 45 v, transistors KT817V at collector-base voltage 60 c, transistors KT817G at collector-base voltage 100 V - 100 μA.

Collector junction capacitance at a collector-base voltage of 10 V, at a frequency of 1 MHz - no more - 60 pF.

Emitter junction capacitance at an emitter-base voltage of 0.5 V - 115 pF.

Complimentary(similar in parameters, but opposite conductivity) transistor - KT816.

Foreign analogues of KT817 transistors.

KT817A - TIP31A
KT817B - TIP31B
KT817V - TIP31C
KT817G - 2N5192.

Transistors - buy... or find for free.

Where can you find Soviet transistors now?
Basically there are two options - either buy it or get it for free when dismantling old electronic junk.

During the industrial collapse of the early 90s, quite significant reserves of some electronic components accumulated. In addition, the production of domestic electronics has never stopped completely and does not stop to this day. This explains the fact that many details of the past era can still be bought. If not, there are always more or less modern imported analogues. Where and how is the easiest way to buy transistors? If it turns out that there is no specialized store near you, then you can try to purchase necessary details by ordering them by mail. You can do this by going to a store website, for example - “Gulliver”.

If you have some old, unnecessary equipment - broken TVs, tape recorders, receivers, etc.

Post navigation

etc. - you can try to get transistors (and other parts) from it.
The easiest way is with KT315. In any industrial and household equipment, from the mid-70s of the twentieth century to the beginning of the 90s, it can be found almost everywhere.
KT3102 can be found in the preliminary stages of tape recorder amplifiers - “Electronics”, “Vega”, “Mayak”, “Vilma”, etc. etc.
KT817 - in the stabilizers of power supplies of the same tape recorders, sometimes in the final stages of sound amplifiers (in Vega RM-238S, RM338S, etc. radio tape recorders)

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A transistor is a semiconductor element of an electrical circuit controlled by an input signal. The signal can be used as a conventional electric current, but also, for example, light in the operation of a phototransistor.

Transistor KT3102 is the most popular Soviet bipolar transistor, which was and is still used today in circuits of various signal amplifiers: operational amplifiers, differential and ULF (low frequency amplifier). KT3102, due to the small thickness of the base, amplified the current signal thousands of times. It is made of silicon, most often by epitaxy (growth of new semiconductor layers on a silicon substrate).

The KT3102 transistor was initially most often manufactured in a metal cylindrical case, familiar to many Soviet transistors. At the moment, it is manufactured in a plastic case. It is a complementary pair for KT3107.

The operating principle of the device is to control the current by changing the voltage. In order for the element to start working, voltage must be applied to it. Then the device will open. By changing the base voltage, we control the entire element.

There are quite a large number of different versions of this device, differing from each other in certain indicators. To consider all variants of the device, we introduce the following parameters of KT3102:

The above characteristics of KT3102 are the same for all models of the device. That is, with any marking of the device, you must take into account the above values. The metrics described below will vary depending on the item type. Subsequently we will present a brief summary of the parameters for each type.

• U KB – maximum potential difference of the collector-base system.
• U CE – maximum potential difference of the collector-emitter system.
• H 21e – gain when connected to a common emitter.
• I KB – reverse collector current.
• KSh – noise factor.

For convenience, all indicators will be presented in a table. The letter M and its absence in the designation of a pair of transistors (for example, KT3102A and KT3102AM) means the type of housing. With the letter M - plastic case. Without it - metal. The indicators do not depend on the type of case. The table will also show foreign analogues of KT3102.

Type	U KB and U CE, V	H 21 E	I KB, MkA	K Sh, db	Analogue KT3102
KT3102A(AM)	50	100-250	0,05	10	2 N 4123
KT3102B(BM)	50	200-500	0,05	10	2N2483
KT3102V(VM)	30	200-500	0,15	10	2SC828
KT3102G(GM)	20	400-1000	0,15	10	BC546C
KT3102D(DM)	30	200-500	0,15	4	BC547B
KT3102E(EM)	20	400-1000	0,15	4	BC547C
KT3102Zh(ZhM)	50	100-250	0,05	-	-
KT3102I(IM)	50	200-500	0,05	-	-
KT3102K(KM)	20 and 30	200-500	0,15	-	-

Marking and pinout

This device has the structure n - p - n. The terminals of the element from left to right, when the front part of the transistor is facing us (flat side with markings), have the following order - “collector-base-emitter”. You need to know the pinout of the KT3102 and take it into account when soldering the device. A soldering error can damage the entire transistor.

Transistor markings are used to distinguish one type of device from another. For example, the differences between type A and B. In the case of KT3102, The marking has the following structure:

• The green circle on the front side indicates the type of transistor. In our case - KT3102.
• The circle on top indicates the letter of the device (A, B, C, etc.). The following designations apply:

A – red or burgundy. B – yellow. B – green. G – blue. D – blue. E – white. F – dark brown.

On some devices, instead of color designations, the markings are written in words. For example, 3102 EM. Such designations are more convenient than colored ones.

Knowing the transistor markings will allow you to correctly select the right element according to the required parameters.

Foreign analogs of KT3102

To replace KT 3102 there are a very large number of foreign analogues of KT 3102. The analogue can be absolutely identical to the original, for example, KT3102 can be safely replaced with 2 SA 2785. This replacement of KT 3102 will have absolutely no effect on the operation of a particular circuit, since the transistors have the same performance. There are also non-identical analogs that differ slightly in performance, but their use is still possible in some cases.

Some foreign analogues of KT3102 were listed in the table. Also, this device can be replaced by domestic analogues KT611 and KT660 or by foreign analogues such as BC547 and BC548.

One of the most famous transistors is KT315, an analogue of which did not soon appear in the vastness of the Soviet Union, and which was the first mass-produced Soviet transistor. It is so universal that it continues to be used to this day (albeit quite limitedly and mostly by radio amateurs). The prerequisite for this was their versatility, long service life and extensive experience in creating something with their help (which can be found in special sources).

Development

Soviet engineers came up with the idea of ​​mass production back in 1966. The transistor was developed in 1967 by the Fryazino Semiconductor Plant in its research and design bureau. And in 1968, the first units came off.

How does it stand out among other transistors?

First of all, we paid attention to its appearance and characteristics. The frequency bar was 250 MHz, which as of 1967 was very, very high. Also, the ease of production led to the production of a huge number of transistors. There was also something unique (at that time) in the issues of grounding the negative pole of the power supply.

The technology behind the transistor

For production, planar technology was used (it was envisaged that all structures were created on one side, the conductivity of the material was the same as in collectors, so first, when used, the base region is formed, and then the emitter region is formed in it). The parameters that he obtained made him the best in the world (at the time of creation). It made it possible to replace many other parts in electronics, while being cheap. It got to the point that in the Soviet Union, stores for radio amateurs sold it by weight.

KT315 - domestic and foreign analogues

But since the main topic of the article is not KT315 - analogues for this transistor, attention should already be paid to the main topic. So, here is a list of analogues:

1. Bipolar transistor BC847B. A relatively expensive (3 rubles per 1 piece) low-power transistor with a significant gain. Compared to KT315, the foreign analogue is quite expensive. But it has the advantage that when soldering and re-soldering it does not fail so quickly (which is not least due to its enlarged and reinforced design). Maximum power dissipation - 0.25. Up to 50 Volts can be supplied to the collector-base direction. To the collector-emitter - up to 45 Volts. The maximum voltage for the emitter-base direction is 6 Volts. The collector junction has a capacity of 8. The maximum junction temperature is 150 degrees. Statistical current transfer coefficient - 200.
2. Bipolar transistor 2SC634. This imported analogue of KT315 is quite balanced in terms of characteristics and price. The maximum power dissipation value is 0.18. The maximum permissible voltage on the collector-base and collector-emitter is 40 Volts. Emitter-base - only 6 Volts. The collector junction capacity is 8. The maximum junction temperature is 125 degrees. Static current transfer coefficient is 90.
3. Bipolar transistor KT3102. To say that for KT315 it is a domestic analogue would be incorrect, because historically it so happened that such parts were manufactured of one type, which meets all the necessary requests and can perform the functions assigned to it. The fact is that simply KT3102 does not exist; another letter must follow. To avoid conflicts, values ​​will be specified for the entire group. You can get more detailed information by looking at each transistor. The domestic development is an improved KT315. Analog in this case is not an entirely appropriate word, but rather an improved mechanism. The maximum power dissipation of KT3102 is 0.25. A maximum voltage of 20-50 Volts can be supplied to the base collector. The maximum voltage that can be supplied to the collector-emitter is also 20-50 Volts. The maximum voltage to the emitter-base is 5 Volts. The capacitance of the collector junction is 6. The maximum junction temperature is 150 degrees. The static current transfer coefficient is 100.
4. Bipolar transistor 2SC641. Maximum power dissipation - 0.1. The voltage in the collector-base direction should not exceed 40 Volts. The maximum voltage in the collector-emitter direction should not be more than 15 Volts. For the emitter-base direction, this value should not exceed 5 Volts. The collector junction capacity is 6 units. The maximum transition temperature is 125 degrees. The static current transfer coefficient is 35.

Where are they used?

KT315, analogues (foreign and domestic) were and are now used by radio amateurs to create amplifiers for high, medium and low frequencies. They can also be used in generators, signal converters and logic circuits. If you use your brain, you can find other uses, but this is the main purpose for the KT315. The parameters of the analog (any) are slightly different. But the main thing is that these are bipolar transistors, and their power is important solely for the power of the circuits that will be assembled.

Conclusion

The article examined the prototype (KT315) and its analogs with a description of the possibilities of their use. We hope that the information provided here will be useful to you. It is also necessary to recall that transistors are rather fragile elements, which also often burn out. Therefore, when working with them, and with other electrical parts, follow safety precautions.

List and quantity of precious metals that can be extracted from the KT3102BM transistor.

Information from manufacturers' directories. A directory of the content of precious metals (gold, silver, platinum and PGM) in a transistor, indicating its weight, which are used (or were used) in production in radio engineering.

Transistor, semiconductor triode- a radio-electronic component made of semiconductor material, usually with three terminals, allowing an input signal to control current in an electrical circuit. Typically used to amplify, generate and convert electrical signals. In general, a transistor is any device that simulates the main property of a transistor - changing the signal between two different states when the signal at the control electrode changes.

In field-effect and bipolar transistors, the current in the output circuit is controlled by changing the input voltage or current. A small change in input quantities can lead to a significantly larger change in output voltage and current. This amplifying property of transistors is used in analog technology (analog TV, radio, communications, etc.). Currently, analog technology is dominated by bipolar transistors (BT) (the international term is BJT, bipolar junction transistor). Another important branch of electronics is digital technology (logic, memory, processors, computers, digital communications, etc.), where, on the contrary, bipolar transistors are almost completely replaced by field-effect ones.

Now let's talk about field effect transistors. What can you assume from their name alone? Firstly, since they are transistors, they can be used to somehow control the output current. Secondly, they are supposed to have three contacts. And thirdly, their work is based on the p-n junction. What will official sources tell us about this?

Field-effect transistors are active semiconductor devices, usually with three terminals, in which the output current is controlled using an electric field.

The definition not only confirmed our assumptions, but also demonstrated a feature of field-effect transistors - the output current is controlled by changing the applied electric field, i.e. voltage. But for bipolar transistors, as we remember, the output current is controlled by the input base current.

Another fact about field-effect transistors can be found by paying attention to their other name - unipolar. This means that only one type of charge carrier (either electrons or holes) is involved in the process of current flow.

The three contacts of field-effect transistors are called the source (the source of current carriers), the gate (the control electrode) and the drain (the electrode where the carriers flow). The structure seems simple and very similar to the design of a bipolar transistor. But it can be implemented in at least two ways. Therefore, a distinction is made between field-effect transistors with a control p-n junction and with an insulated gate.

Transistor circuit and transistor switching circuit.

Any amplifier, regardless of frequency, contains from one to several amplification stages. In order to have an idea of ​​the circuit design of transistor amplifiers, let us consider their circuit diagrams in more detail.

Transistor stages, depending on the options for connecting transistors, are divided into:

1 Cascade with a common emitter (the diagram shows a cascade with a fixed base current - this is one of the types of transistor bias).
2 Cascade with common collector
3 Cascade with a common base

Transistor parameters
UKBO - maximum permissible voltage collector - base;
UCBO and - maximum permissible impulse voltage collector - base;
UCEO - maximum permissible collector-emitter voltage;
UKEO and - maximum permissible pulse voltage collector-emitter;
UKEN - collector-emitter saturation voltage;
USI max - maximum permissible drain-source voltage;
USIO - drain - source voltage when the gate is broken;
UZ max - maximum permissible gate-source voltage;
UZI ots - Transistor cut-off voltage at which the drain current reaches a specified low value (for field-effect transistors with a p-n junction and with an insulated gate);
UZ pore - Threshold voltage of the transistor between the gate and drain, at which the drain current reaches a specified low value (for field-effect transistors with an insulated gate and p-channel);
IK max - maximum permissible direct collector current;
IK max and - the maximum permissible pulse current of the collector;
IC max - maximum permissible constant drain current;
IC start - initial drain current;
IC rest - residual drain current;
IKBO - reverse collector current;
RK max - maximum permissible constant power dissipation of the collector without heat sink;
RK max t - maximum permissible constant power dissipation of the collector with a heat sink;
RSI max - maximum permissible constant power dissipation drain - source;
H21E - static current transfer coefficient of a bipolar transistor in a circuit with a common emitter;
RSI open - resistance drain - source in open state;
S - characteristic slope;
fGR. - cutoff frequency of the current transfer coefficient in a circuit with a common emitter;
KS - noise figure of a bipolar (field-effect) transistor;

Transistor connection circuits

To be included in the circuit, the transistor must have four terminals - two input and two output. But transistors of all varieties have only three terminals. To turn on a three-terminal device, it is necessary to combine one of the terminals, and since there can only be three such combinations, there are three basic circuits for connecting a transistor:
Bipolar transistor connection circuits

with a common emitter (CE) - provides amplification in both current and voltage - the most commonly used circuit;
with a common collector (OC) - provides amplification only by current - used to match high-impedance signal sources with low-impedance load resistances;
with a common base (CB) - amplification only by voltage; due to its shortcomings, it is rarely used in single-transistor amplification stages (mainly in microwave amplifiers), usually in composite circuits (for example, cascode).

Field-effect transistor connection circuits

Field effect transistors, like with p-n junction(channel) and MOS (MDS) have the following connection circuits:

with a common source (CS) - an analogue of a OE bipolar transistor;
with a common drain (OC) - an analogue of an OK bipolar transistor;
with a common gate (OG) - an analogue of the OB of a bipolar transistor.

Open collector (drain) circuits

“Open collector (drain)” is the connection of a transistor according to a circuit with a common emitter (source) as part of an electronic module or microcircuit, when the collector (drain) terminal is not connected to other elements of the module (microcircuit), but is directly brought out (to the module connector or microcircuit output). The choice of transistor load and collector (drain) current is left to the developer of the final circuit, which includes a module or microcircuit. In particular, the load of such a transistor can be connected to a power source with a higher or higher voltage than the supply voltage of the module/chip. This approach significantly expands the scope of applicability of a module or microcircuit due to a slight complication of the final circuit. Transistors with an open collector (drain) are used in TTL logic elements, microcircuits with powerful key output stages, level converters, bus shapers (drivers), etc.

Less commonly used is reverse connection - with an open emitter (source). It also allows you to select the transistor load after manufacturing the main circuit, apply a voltage to the emitter/drain of a polarity opposite to the supply voltage of the main circuit (for example, negative voltage for circuits with npn bipolar transistors or N-channel field-effect transistors), etc.

Transistor marking - Color and code marking of transistors.

Code marking of the date of manufacture of devices
Year Coded designation
1983R
1984S
1985 T
1986U
1987V
1988W
1989 X
1990A
1991 B
1992 C
1993D
1994 E
1995 F
1996H
1997 J
1998 K
1999L
N2000

Month Coded designation
January 1
February 2
March 3
April 4
May 5
June 6
July 7
August 8
September 9
October 0
November N
December D

Group color coding
Group Colored dot on top
A Dark red
B Yellow
B Dark green
G Blue
D Blue
E White
F Dark brown
And Silver
K Orange
L Light tobacco
M Gray

Transistor pinout

When selecting analogue parts according to diagrams, the question of their correct installation on a printed circuit board always arises. Pinout of transistors. Now I want to describe and lay out on one page the pinouts (pinouts) of all domestic transistors, so that you are not misled by the question of the location of the transistor legs.

Transistors reference book - transistor housings

transistors directory - transistor housings

Working Principle of Transistor

Currently, two types of transistors are used - bipolar and field-effect. Bipolar transistors appeared first and became most widespread. Therefore, they are usually simply called transistors. Field-effect transistors appeared later and are still used less frequently than bipolar ones.

Bipolar transistors are called bipolar transistors because electricity they form electric charges of positive and negative polarity. Positive charge carriers are usually called holes, negative charges are carried by electrons. A bipolar transistor uses a crystal made of germanium or silicon - the main semiconductor materials used to make transistors and diodes. That's why some transistors are called silicon, others - germanium. Both types of bipolar transistors have their own characteristics, which are usually taken into account when designing devices.

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